? 2000 ixys all rights reserved 1 - 4 high voltage bimosfet tm ixbh 15n140 v ces = 1400/1600 v monolithic bipolar ixbh 15n160 i c25 = 15 a mos transistor v ce(sat) = 5.8 v typ. n-channel, enhancement mode t fi = 40 ns features ? international standard package jedec to-247 ad high voltage bimosfet tm - replaces high voltage darlingtons and series connected mosfets - lower effective r ds(on) monolithic construction - high blocking voltage capability - very fast turn-off characteristics mos gate turn-on - drive simplicity reverse conducting capability applications flyback converters dc choppers uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies crt deflection lamp ballasts advantages easy to mount with 1 screw (isolated mounting screw hole) space savings high power density 918 to-247 ad g c e g = gate, c = collector, e = emitter, tab = collector c (tab) c e g symbol conditions maximum ratings 15n140 15n160 v ces t j = 25 c to 150 c 1400 1600 v v cgr t j = 25 c to 150 c; r ge = 1 m 1400 1600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c, 15 a i c90 t c = 90 c9a i cm t c = 25c, 1 ms 18 a ssoa v ge = 15 v, t vj = 125 c, r g = 47 v ce = 0.8v ces i cm = 18 a (rbsoa) clamped inductive load, l = 100 h p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque 1.15/10 nm/lb.in. weight 6g symbol conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1 ma, v ge = 0 v 15n140 1400 v 15n160 1600 v v ge(th) i c = 1 ma, v ce = v ge 48v i ces v ce = 0.8 v ces t j =25 c 100 a v ge = 0 v t j = 125 c 0.1 ma i ges v ce = 0 v, v ge = 20 v 500 na v ce(sat) i c = i c90 , v ge = 15 v 5.8 7.0 v t j = 125 c 7.7 v
? 2000 ixys all rights reserved 2 - 4 ixbh 15n140 ixbh 15n160 symbol conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. c ies 1200 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 80 pf c res 11 pf q g i c = 9 a, v ce = 600 v, v ge = 15 v 45 nc t d(on) 200 ns t ri 60 ns t d(off) 180 ns t fi 40 ns r thjc 0.83 k/w r thck 0.25 k/w reverse conduction characteristic values (t j = 25 c, unless otherwise specified) symbol conditions min. typ. max. v f i f = i c90 , v ge = 0 v 3.8 5 v inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 100 h, v ce = 960 v, r g = 47 dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 to-247 ad outline
? 2000 ixys all rights reserved 3 - 4 v ce - volts 0 400 800 1200 1600 i cm - amperes 0.1 1 10 100 v f - volts 0123456 i f - amperes 0 5 10 15 20 25 30 v ce - volts 0 2 4 6 8 101214161820 i c - amperes 0 10 20 30 40 50 60 70 q g - nanocoulombs 0 1020304050 v ge - volts 0 2 4 6 8 10 12 14 16 v ce - volts 0246810121416182022 i c - amperes 0 10 20 30 40 50 60 70 13v t j = 25 c v ge = 17v t j = 125 c v ce = 600v i c = 9a t j = 125 c v cek < v ces 15v v ge - volts 5678910111213 i c - amperes 0 10 20 30 40 50 60 13v v ge = 17v 15v v ce = 20v t j = 25 c t j = 125 c t j = 25 c ixbh 15n140 ixbh 15n160 t j = 125 c fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. characteristics of reverse conduction fig. 5 typ. gate charge characteristics fig. 6 reverse biased safe operating area rbsoa ixbh 15n140 ixbh 15n160
? 2000 ixys all rights reserved 4 - 4 ixbh 15n140 ixbh 15n160 i c - amperes 0 5 10 15 20 t fi - nanoseconds 0 10 20 30 40 50 60 pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 z thjc - k/w 0.0001 0.001 0.01 0.1 1 r g - ohms 0 102030405060708090100 t d(off) - nanoseconds 0 100 200 300 400 single pulse ixbh15 v ce = 960v v ge = 15v r g = 47 w t j = 125 c v ce = 960v v ge = 15v i c = 9a t j = 125 c fig. 7 typ. fall time fig. 8 typ. turn off delay time fig. 9 typ. transient thermal impedance
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